Abstract
Highly epitaxial 0.755(Bi0.5Na0.5)TiO3-0.065BaTiO3-0.18SrTiO3 (BNT-BT-ST) ferroelectric films with (100), (110) and (111) orientations were fabricated on Nb doped SrTiO3 (N-ST) substrates. Three patterns of microstructure morphologies are observed in the epitaxial thin films. The superior ferroelectric with remanent polarization Pr of 18 µC/cm2 is obtained in (100) oriented thin film. The excellent dielectric properties with highest dielectric constant (1170) and tunability (68%) exhibit in the (111) oriented thin films. Both of the ferroelectric and dielectric properties in the epitaxial BNT-BT-ST films are more remarkable than those of the polycrystalline BNT-BT-ST film. The results should be ascribed to the orientated microstructure and ferroelectric-to-relaxor transition observed in the epitaxial BNT-BT-ST thin films. Strong orientation dependences of microstructure and electric properties are due to the relative alignment of crystallites and anisotropic polarization rotation. This study provides an insight into how to utilize orientation to regulate the structure and properties of epitaxial thin films.
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