Abstract
An improved high purity hydrogen peroxide was developed for advanced semiconductor devices manufacturing. After treatment of a Si wafer with this hydrogen peroxide, no metallic impurity was adsorbed onto the Si wafer surface. However, a few parts per million of organic impurities remain in the hydrogen peroxide as total organic carbon (TOC). These organic impurities result from the production process for raw hydrogen peroxide and are identified as formic acid, acetic acid, and cyclohexanone deviatives. To examine the influence of organic impurities on semiconductor devices, we evaluated the electrical characteristics of metal oxide semiconductor (MOS) diodes with thermal oxide films, including chemical oxide by treatment with the improved hydrogen peroxide. In spite of high organic impurity content, the experimental results show that the organic impurities in the hydrogen peroxide did not affect the properties of MOS diodes with about 9 nm oxide films.
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