Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi218 nm PMOS

N Atan,M.F Azle,B.Y Majlis,Ibrahim Ahmad

doi:10.1051/matecconf/20167801019

Abstract

Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO 2 was used as the gate dielectric ad TiO 2 was used as the gate material. The transistor HfO 2 /TiSi 2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method’s practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source–drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO 2 /TiSi 2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations) and noise factors were evaluated by examining the Taguchi’s signal-to-noise ratio (SNR) and nominal-the-best for the threshold voltage (VTH). After optimization, the result showed that the VTH value of the 18-nm PMOS device was -0.291339.

Highlights

Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods
By applying a low pressure chemical vapour deposition process (LPCVD), a 1500-Å nitride layer was deposited on top sample of the oxide layer
The shallow trench isolation (STI) was annealed for 15 minutes at a temperature of 850°C to develop a phosphor silicate glass (PSG) at the top of the substrate followed by oxide and nitride pad

Summary

Introduction

Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. Taguchi method is the best optimization process for a threshold voltage of HfO2/TiSi2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations) and noise factors were evaluated by examining the Taguchi’s signal-to-noise ratio (SNR) and nominal-the-best for the threshold voltage (VTH). “Metal–oxide–semiconductor field-effect transistor” or “MOSFET” is a very prevalent type of transistor It is unique because it entails very little current to turn on (less than 1.0 mA) yet delivers a much higher current to a load (10.0mA to 50.0A or more). Over a billion of individually packaged MOSFETs (known as discrete) are manufactured every year in order to meet the increasing demands for ICs from electronic companies This in turn reduces the price of every chip.

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