Abstract
The effect of the off-cut angle of an r-plane sapphire substrate has been investigated on the growth of a-plane AlN thick layer by low-pressure hydride vapor phase epitaxy (LP-HVPE). The off-cut angle ( θ) was changed from +5.0° (close to c-axis) to −5.0° (close to m-axis). Results show that the crystalline quality and surface morphology are very sensitive to the sign of θ off-angle. The plus θ off-angle is found to be dramatically reduce the full-widths at half-maximum (FWHM) of X-ray rocking curves (XRC), compared with the minus θ off-angle. In-plane FWHM anisotropic feature marked as M- or W-shape dependence on azimuth angle was observed for a-plane AlN. The shape and degree of anisotropy depend on the sign of θ off-angle, while the plus of θ off-angle will leads to the W-shape and the decreased anisotropy. The minimum crystal tilts and twists of the films are observed for the vicinal sapphires with the plus off-angles of +0.2° to +1.0°.
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