Influence of O2 – plasma ambience and growth temperature on the oxidation of Mo-metal and volatilization of oxides

Abstract

In this communication, we investigated role of the oxygen plasma on the oxidation of Mo strip surface (source of Mo) and volatilization of formed oxide species. Molybdenum oxide thin films are deposited on Si substrate simultaneously by using the volatilized oxide species as vapor source. A special setup is designed to create stable discharge oxygen plasma. Both the Mo strip surface and oxide films deposited on Si substrates at different temperatures are characterized independently. The presence of well indexed and intense peaks corresponding to MoO3 and Mo8O23 oxide phases in x-ray diffraction (XRD) patterns of metals strips, heated at different temperatures in oxygen plasma ambience has been considered as proof of oxidation of Mo-strip surface. The reduction in peaks intensity with increase in metal strip temperature indicates high rate of oxidation and oxide volatilization. It is observed that film formation on silicon substrate could not take place without oxygen plasma even at 500ºC. The scanning electron microscopy (SEM) studies of Mo strips as well as the films deposited on Si substrates, at different temperatures are showing the modifications in surface morphology and agreed with the XRD results. Both Raman and FTIR observations of Mo strip are also in consonance with the XRD and SEM findings. The occurrence of oxidation of Mo metal and volatilization of oxide species at this low temperature 300ºC is reported for the first time.