Abstract

The influence of charge transfer on the hole concentration in CuO2 planes has been studied by analysis of the bond valence sum and the oxidation states of copper. It has been found that there exists an additional effective charge transfer between the CuO2 planes and chains which changes nonlinearly with the oxygen content and can be expressed as q=0.151 exp(-0.007/y4)+0.35 exp(0.5-0.5/y4). This makes it possible to decouple the mobile from the localized hole concentration more accurately. In addition, the results show that the origins of the 90 K and 60 K plateaux in Tc as a function of oxygen content are associated with this nonlinear charge transfer and there is a close correlation between the derivatives of Tc and the mobile hole concentration with respect to the oxygen stoichiometry.

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