Abstract
This paper describes the results of the action of gaseous NO 2 on the semiconducting properties of lutetium phthalo-naphthalocyanine thin films. They are compared to those already presented on the interaction between NO 2 and lutetium diphthalocyanine or copper phthalocyanine thin films. The difference in behaviour among the three compounds in the presence of NO 2 is due to (i) the different intrinsic charge carrier concentrations, (ii) the more or less good ability to undergo redox reactions with dopants, and (iii) the polycrystalline or quasi-amorphous structures of the thin films which influence the diffusion rate of the gas within the layers.
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