Influence of n-Mosfet transistor on dye-sensitized solar cell efficiency

Abstract

A new strategy for evaluating the efficiency of Dye-sensitized Solar Cell (DSC) employed in this study was to introduce a device stabilizer which also functioned as an external load. This aim was accomplished through computations of efficiency of different DSCs based on n-Mosfet transistor. Transistor Z44 mosfet's impact on the DSC systems was to significantly moderate the effect of two vital components namel; the photoanodes and electrolyte sensitizers. The outcome of the Z44 mosfet incorporation inside the DSC was a synchronization in photovoltaic spectral responses thereby, minimizing the common limitations of DSCs such as dye synergy, redox kinematics, photophysics and roughness factor which is not restrictive to N719 dyes. This study presents the results of indium-doped tin oxide (ITO) conducting glass doped DSCs with different electrolytes enhanced with a transistor mosfet; short-circuit current density (Isc) of 0.104 A cm−2, open-circuit voltage (Voc) of 240.6 mV, efficiency of 0.9 % and a fill factor of 0.12 obtained under 1 atmospheric air mass conditions. The implication of this result is possible reproducibility and modelling of T.daniellii Mosfet DSC based on the comparative analysis of the output performance of T.daniellii DSC on TiO2 and ZnO photoanode. This also gives impetus for further scientific inquiry.