Abstract
Nitrogen (N)-doped ZnO thin films have been deposited on Si (100) substrates by pulsed laser deposition under different N2 pressures. The optical and magnetic properties of N-doped ZnO films have been studied with photoluminescence, Raman spectroscopy, and vibrating sample magnetometer. Photoluminescence and Raman studies reveal that N2 pressure affected the defects of N-doped ZnO films. Under 10 Pa N2 pressure, N substitutes O and forms NO acceptor. Zn interstitials are main compensating donors. Under higher N2 pressures, N not only substitutes O but also forms N2O molecules in N-doped ZnO films. Zn antisizes are compensating donors. In additional, Zn vacancies are formed and the concentration increases with increasing N2 pressure. Magnetic properties of these films show that there are two distinct ferromagnetic mechanisms: the origin of ferromagnetism in the ZnO:N-10 Pa film is Zn interstitial, while Zn vacancy leads to ferromagnetism in the ZnO:N-50 Pa film.
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