Influence of Nitrogen on Hydrogenated Amorphous Carbon Thin Films Deposited by Plasma Focus Device

Abstract

To carry out our research, a plasma focus device is used to deposit thin films of nitrogen doped hydrogenated amorphous carbon (a-C:H:N) onto the stainless steel-AISI-304 substrates at room temperature. Thin films are deposited with the same numbers of focus shots, at the same distance from the anode tip and with different partial pressures of nitrogen in the mixtures of acetylene/nitrogen as working gas. The nitrogen contents of deposited films are studied using nuclear reaction analysis (NRA) techniques. The results prove that nitrogen contents of the samples do not increase significantly by increasing partial pressure of nitrogen of the working gas for both sets of the samples. Moreover, NRA results exhibit the limitation of nitrogen incorporated into the samples, when this experimental setup is used. G-peak position and peak intensity ratio of the D-band to G-band (ID/IG) are used to investigate the diamond characters. Also, they show that sp2 clustering is highly dependent on the nitrogen atomic contents and angular position of the samples. Scanning electron microscopy (SEM) shows the granular surface morphology of the films. Furthermore, it shows that angular position of the samples with respect to the anode axis plays an important role in the grain size of the surface of the samples. The thickness of the films decreases significantly by increasing angular position of the samples, while it decreases slightly by increasing partial pressure of nitrogen of the working gas. The Vickers surface hardness of the thin films exhibits significant dependency on the sp2 clustering.