Abstract
Thin films of TiAlN were deposited on (111) oriented silicon single crystal substrates from a composite Ti–Al target by DC reactive magnetron sputtering at 773 K under various N2 flow rates. Substantial influence of N2 flow rate on the rate of deposition, grain size, crystallinity, composition, hardness and resistivity was observed. While the deposition rate, grain size and the ratio of concentration of Ti to Al of the deposited TiAlN films decreased with increasing N2 flow rate, the resistivity of the films increased with increasing N2 flow rate.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
