Influence of Nitridation Time on the Characteristics of GaN Films Deposited on Ni Metal Substrate by ECR-MOCVD

Abstract

GaN films were deposited on metal Ni substrates using electron cyclotron resonance plasma-enhanced metal organic chemical vapour deposition system (ECR-PEMOCVD). The nitridation time dependent structural and morphological characteristics of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and scanning electron microscope (SEM) analysis. The results indicate that it is feasible to deposit GaN films on Ni metal substrate under the proper deposition procedures. The high quality GaN films with c-axis preferred orientation and dense and uniform microstructure are successfully obtained under the optimized nitridation time. The GaN/Ni structure has great potential for the improvement of short-wavelength optical devices with excellent heat dissipation.