Abstract
GaN nanowires have been successfully synthesized on Si(111) substrates by magnetron sputtering through nitridizing Ga2O3/Cr thin films. The influence of nitridation time on microstructure, morphology and optical properties of GaN nanowires was analyzed in detail. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminsescence spectroscopy were carried out to characterize the microstructure, morphology, and optical properties of GaN samples. The results demonstrate that the GaN nanowires are single crystal with hexagonal wurtzite structure and highquality crystalline when nitridized at 950 °C for 15 min, having the size of 30–80 nm in diameter and several tens of microns in length with good emission properties.
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