Abstract
Gallium nitride (GaN) epilayers were successfully grown on beta gallium oxide (β-Ga2O3) single crystal in an NH3 atmosphere at 950 °C for 5 h. The thickness of the epilayers was measured using environmental scanning electron microscopy (ESEM). The structure quality of the GaN epilayers was confirmed by high resolution X-ray diffraction (HR-XRD) and Raman spectroscopy. In addition, the surface morphology of the epilayers was investigated by atomic force microscopy (AFM). The results obtained for the epilayers indicated the potential use of GaN crystal as a buffer layer for optoelectronic devices.
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