Abstract
We give a detailed analysis of the influence of near-resonant self-phase modulation on subpicosecond pulse propagation through bulk GaAs at low temperature. We cover the dependence of the pulse characteristics on the propagation length, the input pulse intensity, the focusing into the sample, and the detuning from the band edge. Numerical simulations based on the nonlinear Schrodinger equation are compared with the experimental observations. Phase-resolved measurements characterize the evolution of the pulse phase during propagation. All experiments are based on a fast-scanning technique that ensures high signal-to-noise ratios.
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