Abstract
Thin-film precursors of BCx were formed by pulsed laser codeposition of boron and carbon. Targets made of pressed boron and carbon powders with an equal element content (B/C = 1/1) and an increased carbon content (B/C = 1/3) were used. The films were deposited on sapphire substrates at elevated temperature (700°C) which determined the initial properties of the precursor BCx films. Irradiation of the films was carried out by laser pulses of nanosecond duration with varying intensity. The films obtained by laser annealing of BCx (Q-BCx) were studied by scanning electron microscopy and micro-Raman spectroscopy. Irradiation under optimal conditions made allowed to realize pulsed melting of the films and partial preservation of their continuity on the substrate. The local structure of Q-BCx films and the nature of the changes in their electrophysical properties depended on the composition of the precursor films and the laser irradiation regimes.
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