Abstract
N-type nanocrystalline cubic SiC:H thin films were prepared by a hot-wire chemical vapor deposition from SiH4/CH4/H2/N2 and the structural and electrical properties were investigated. As the N2 gas flow rate, F(N2), was increased, the intake of N atoms into the films increased, which caused the degradation of the crystallinity of the films. Therefore, in the region of the small intake of N atoms the conductivity of the N-doped films increased with the increase in F(N2), though, in the region of the large intake of N atoms the conductivity reduced, resulting from the pronounced degradation of the crystallinity. An increase in the H2 gas flow rate resulted in the improvement of the crystallinity and, consequently, the conductivity.
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