Abstract
We examine the role of N environment on persistent photoconductivity (PPC) in GaAs${}_{1\ensuremath{-}x}$N${}_{x}$ films. For $x$ g 0.006, significant PPC is observed at cryogenic temperatures, with the PPC magnitude increasing with increasing $x$ due to an increase in the density of N-induced levels. Interestingly, rapid thermal annealing suppresses the PPC magnitude and reduces the N interstitial fraction; thus, the N-induced level is likely associated with N interstitials. PPC is attributed to the photogeneration of carriers from N-induced levels to the conduction-band edge, leading to a modified N molecular bond configuration. With the addition of thermal energy, the ground state configuration is restored; the N-induced level is then able to accept carriers and the conductivity decays to its preillumination value.
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