Abstract
The authors investigated the synthesis of GaIn(N)As∕Ga(N)As multiple quantum wells by molecular beam epitaxy. Introducing N into the GaInAs appears to suppress the incorporation of In as indicated by reflective high-energy electron diffraction (RHEED). This effect is mainly due to the N-induced enhancement of In surface segregation at the growth front and is evidenced by the increasing damping rate of RHEED oscillations with N incorporation. The N-induced enhancement of In segregation in the GaInNAs quantum wells is confirmed by secondary-ion-mass spectroscopy and high-resolution x-ray diffractions, and its origin is discussed.
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