Abstract
The influence of various parameters such as the initial low temperature buffer layer and layer thickness on the overall MOVPE-grown GaAs on Si crystal properties has been investigated. An accurate control of the initial buffer layer, nucleating as a three-dimensional island on Si (TEM results), induces a substantial defect reduction in GaAs on Si epilayers. Further defect reduction is achieved by in-situ high temperature annealing (850°C) under AsH3/H2 flow during growth. No change of the silicon cross diffusion profile (SIMS) or residual stress magnitude was observed, in contrast with post-growth annealing processes which are shown also to affect detrimentally the optical properties. Moreover, the modification of the main residual acceptor species and the (100) coplanar tensile stress in GaAs on Si is discussed in the light of photoluminescence spectroscopy.
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