Abstract
Bound-free absorption in strained InxGa1−xAs/GaAs p-doped quantum wells is calculated for various values of the mole fraction x. The position dependence of Luttinger parameters is taken into account. Values of absorption exceeding those in unstrained structures by a factor of 2 are found. Also, it is shown that in symmetric structures it suffices to calculate the wave functions of only one block of the Luttinger-Kohn Hamiltonian. © 1996 American Institute of Physics.
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