Influence of modulation period for β-Cu2+xSe/SiC nano-multilayer films on their thermoelectric properties

Abstract

In this study, β-Cu2+xSe/SiC nano-multilayer films with different modulation period were successfully deposited on SiO2/Si substrates by sputtering alternately using Cu–Se and SiC targets. The deposited films were observed on both surface and cross-section, and the thermoelectric properties were studied. The results show that both carrier concentration and mobility at room temperature decreased with the reducing modulation period for the nano-multilayer films. The conductivity slightly decreased and Seebeck coefficient greatly increased with the reducing modulation period. As a result of competition, the power factor of the nano multilayer films increased with the reducing modulation period because the positive effect of the Seebeck coefficient exceeded the negative effect of the conductivity. In the case of β-Cu2+xSe/SiC nano multilayer film with the smallest modulation periods (210 ​nm), the power factor reached 0.39 ​mWm−1K−2 and 0.59 ​mWm−1K−2 at room temperature and 325 ​°C, respectively. The enhanced power factor for nano multilayer films is attributed to the scattering process at the β-Cu2+xSe/SiC layer interface, which reduces the carrier concentration and the mobility. It is concluded that the thermoelectric properties of β-Cu2+xSe films can be effectively improved by designing nano multilayer structure.