Abstract
Lanthanum-substituted bismuth titanate, Bi 3.5La 0.5Ti 3O 12 (i.e., x=0.5 in Bi 4− x La x Ti 3O 12), thin films have been grown on Pt/Ti/SiO 2/Si substrates using pulsed laser deposition. The frequency dependence of the real part ε′( ω) and the imaginary part ε″( ω) of the dielectric constant has been studied. The ε′( ω) does not show any sudden change within the frequency range of 10 2–10 6 Hz. In contrast, the ε″( ω) shows a large dispersion as frequency decreases. The observed relaxation behavior in ε″( ω) can be explained in terms of a migration of oxygen vacancies in (Bi 2O 2) 2+ layers, not in Bi 2Ti 3O 10 perovskite layers.
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