Abstract
For Mo-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, high quality CZTSSe absorbers together with a moderately thick MoSe2 layer at CZTSSe/Mo interfaces are crucial for boosting the cell efficiency. Herein, a simple Mo pretreating method is proposed and its influence on microstructure evolution of solution-processed CZTSSe absorbers under different selenization temperatures is detailedly investigated. It is found that Mo pretreatment can not only significantly affect the microstructure formation of CZTSSe film but also suppress the over-selenization of Mo electrode, and effectively promote the cell efficiency from 2.48% to 6.67% by combing an optimized selenization process. The results are of great significance for the optimization of absorber layer structures in high-efficient CZTSSe thin-film solar cells.
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