Abstract
(In,Mn)N has been grown onc-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The dependence of Mn incorporation on the growth conditions was studied in situ by reflection high-energy electron diffraction and ex situ by high-resolution x-ray diffraction and secondary-ion mass spectroscopy. It was found that the growth temperature significantly affected the Mn replacement in In sites. The optimized growth temperature was about 280°C. Mn incorporation was also affected by the (In+Mn)/N ratio and the Mn/(In+Mn) flux ratio. N-rich growth conditions were found to be favored for Mn incorporation and replacement in the In sites.
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