Abstract
As the angle of the miscut of a Si(111) substrate increases, the luminous efficiency of InGaN LEDs decreases dramatically, along with a considerable blue shift of emission wavelength. The blue shift of the wavelength and the decrease in the efficiency are found to originate from the reduced indium incorporation and the poor uniformity of the quantum wells. The origin of the nonuniform indium incorporation of the samples is attributed to the surface morphologies formed by step bunching, as confirmed by atomic force microscopy measurements.
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