Abstract
ABSTRACTThe influence of a wide range of elements on oxidation behavior of TiAl was investigated by micro-alloying using ion implantation with ion doses of 1019 to 1022 m−2 and at acceleration voltages of 40 to 340kV. The oxidation resistance was assessed by a cyclic oxidation test at 1200K in a flow of purified oxygen under atmospheric pressure. The implanted elements can be classified into several groups according to their effect and mechanism. The mechanisms by which the oxidation resistance is improved are as follows: (1) Formation of a protective Al2O3 layer through β-phase formation, which was confirmed by TEM observations, in the modified surface layer by the implantation. (2) Reduction of TiO2 growth rate due to doping effect of the implanted element. (3) Protective Al2O3 layer formation through migration of volatile halide. (4) Enrichment of oxide of the implanted element in the scale. On the other hand, the oxidation resistance is decreased by (1) enhanced TiO2 growth due to doping effect, (2) lattice defects induced by the implantation, and (3) decreased scale strength and enhanced scale spallation.
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