Abstract
Ba(Zr0.20Ti0.80)O3 (BZT) thin films are deposited on Pt(111)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(111)/Ti/SiO2/Si substrates by a sol–gel process. The BZT thin films directly grown on Pt(111)/Ti/SiO2/Si substrates exhibit highly (111) preferred orientation, while the films deposited on Pt(111)/Ti/SiO2/Si substrates with MgO and ZrO2 buffer layers show highly (110) preferred orientation. At 100kHz, dielectric constants are 417, 311 and 321 for the BZT thin films grown on Pt(111)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(111)/Ti/SiO2/Si substrates, respectively. The difference in dielectric properties of three BZT films can be attributed to the series capacitance effect, interface conditions and their orientations.
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