Abstract
Zn 1− x Mg x S-based Schottky barrier ultraviolet (UV) photodetectors were fabricated using the molecular-beam-epitaxy (MBE) technique. The influence of Mg content on MBE-grown Zn 1− x Mg x S-based UV photodetectors has been investigated in details with a variety of experimental techniques, including photoresponse (PR), capacitance–voltage, deep level transient Fourier spectroscopy (DLTFS) and photoluminescence (PL). The room-temperature PR results show that the abrupt long-wavelength cutoffs covering 325, 305, 295, and 270 nm with Mg contents of 16%, 44%, 57%, and 75% in the Zn 1− x Mg x S active layers, respectively, were achieved. But the responsivity and the external quantum efficiency exhibited a slight decrease with the Mg content increasing. In good agreement with the PR results, both of the integrated intensity of the PL spectra obtained from Zn 1− x Mg x S thin films with different Mg compositions ( x=31% and 52%, respectively) and the DLTFS spectra obtained from Zn 1− x Mg x S-based ( x=5% and 45%, respectively) UV photodetector samples clearly revealed a significant concentration increase of the non-radiative deep traps with increasing Mg containing in the ZnMgS active layers. Our experimental results also indicate that the MBE-grown ZnMgS-based photodetectors can offer the promising characteristics for the detection of short-wavelength UV radiation.
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