Abstract
Line-edge roughness (LER) and linewidth roughness (LWR) in lithography are best characterized by the roughness power spectrum density (PSD), or similar measures of roughness frequency and correlation. The PSD is generally thought to be described well by three parameters: standard deviation, correlation length, and roughness exponent. The next step toward enabling these metrics for pertinent industrial use is to understand how real metrology errors interact with these metrics and what should be optimized on the critical dimension scanning electron microscopy (CD-SEM) to improve error budgets. In this work, Java Monte Carlo Simulator of Secondary Electrons (JMONSEL) simulation is used to better understand how various SEM parameters, beam size/shape, and sample profile influence SEM line edge uncertainty and also some of the systematic shifts in edge location assignment. A thorough understanding of the impact of the SEM on the measurement results enables better measurement of LER PSD and better interpretation of measurement results.
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