Abstract
Le depot d'ilots de metal sur des surfaces de semiconducteurs influe fortement sur le degagement photoelectrochimique d'hydrogene. La presence du metal entraine un deplacement des courbes photocourant-potentiel du cote negatif ou positif, suivant e metal. Explication des phenomenes
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Schedule a callMore From: Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
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