Abstract
It has been recently shown that inhomogeneity of semiconductor heterostructure and optimization of annealing time leads to decrease depth of p–n-junctions and to increased homogeneity of dopant distribution in doped area. It has been also recently shown that mechanical stress in two-layer heterostructure (substrate and epitaxial layer) changes dopant distribution in heterostructure in directions, which are perpendicular to interface between layers of heterostructure, in comparison with unstressed sample. In this paper we consider an alternative approach to increase density of p–n-junctions in the same heterostructure by using overlayer. The overlayer leads to additional mechanical stress. The stress gives us possibility to increase density of p–n-junctions in the heterostructure.
Highlights
One of actual problems of the solid-state electronics is increasing of density of elements of integrated circuits (IC) (Grebene 1983; Gotra 1991; Lachin and Savelov 2001)
To use the approach we consider a semiconductor heterostructure (H), which consists of a substrate (S) with known type of conductivity (n or p) and epitaxial layer (EL)
The dopant has been annealed to produce p–njunction near interface between layers of H. In this situation sharpness of the p–n-junction increases and at the same time homogeneity of dopant distribution in doped area increases in comparison with p–n-junction in homogenous sample
Summary
One of actual problems of the solid-state electronics is increasing of density of elements of integrated circuits (IC) (Grebene 1983; Gotra 1991; Lachin and Savelov 2001). To increase of density of elements of IC it has been recently elaborated nearsurficial (laser and microwave) types of annealing and inhomogenous distributions of defects in doped areas of elements of IC. The dopant has been annealed to produce p–njunction near interface between layers of H. In this situation sharpness of the p–n-junction increases and at the same time homogeneity of dopant distribution in doped area increases in comparison with p–n-junction in homogenous sample. A dopant has been infused in the EL to produce a p–n-junctions near interface between layers of H. During the annealing dopant diffusion achieves the interface between EL and S In this situation density of p–njunctions in EL increases in comparison with situation in Pankratov (2010).
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