Abstract
AbstractThe structural properties of GaAs and AlGaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) on a GaAs substrate surfaces of different crystallographic orientations are investigated. Under optimal growth conditions, the aspect ratio of MBE grown GaAs NWs is higher than 100. The maximum length of NWs is several times (up to 10) larger than the effective thickness of deposited GaAs. A kinetic model of the diffusion‐induced NW growth is used to predict the dependence of NW length on the technologically controlled MBE growth conditions. The obtained results demonstrate that the NW growth in our experiments is mainly controlled by the adatom diffusion towards their tip rather than by the conventional adsorption controlled vapor–liquid–solid mechanism. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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