Abstract
We have investigated how the sputter yield and the shrinkage of masking structures depend on the angle of incidence of the bombarding ions. In numerous cases, suitable mask materials can be used in the preparation of deep structures with high lateral resolution by adjusting the angle of incidence of the ion beam to maximize the difference between the sputter yield of the masking material and of the etched structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
