Abstract
Complete sets of elastic, piezoelectric, dielectric, and electromechanical properties of [001]c and [011]c poled pure and 0.5 wt. % manganese-doped 0.24Pb(In1/2Nb1/2)O3-0.47Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals have been characterized at room temperature. The results indicate that manganese ion substitution in the B-site of perovskite 0.24PIN-0.47PMN-0.29PT single crystals makes the material harder with much higher mechanical quality factor Qm and slight decrease in piezoelectric and dielectric constants. The much improved Qm value (200-900) makes Mn-doped single crystals more suitable for high-power transducer applications than pure single crystals.
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