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Abstract
We investigated the electric charge injection properties of a floating-gate type metal-insulator Si capacitor having different-ME gate insulators. The samples showed charge-injection type behaviour in capacitance-voltage curves, and it was revealed that the amount of injected charges can be controlled by the application of an external magnetic field. The sample having a high-ME-coefficient gate insulator showed stepwise capacitance-voltage curves unlike the normal one. These results indicate that this capacitor, which employs a magnetic gate insulator, has the potential to be used in multilevel memory by the application of an external magnetic field.
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