Abstract
Abstract We investigate the incorporation of magnesium in gallium nitride (GaN) films deposited on (0 0 0 1) sapphire (c-Al 2 O 3 ) substrates by low-pressure metalorganic chemical vapor-phase deposition (MOCVD). The growth, structure and optical properties of GaN samples with a dopant concentration ranging from 10 17 to 10 21 cm −3 have been studied using transmission electron microscopy and micro-Raman spectroscopy. The growth rate and sample quality are strongly influenced by the amount of magnesium incorporated in the sample, with the inclusion of cubic GaN on the otherwise hexagonal material and a disruption of the two-dimensional growth for the highest dopant concentrations. The presence of the cubic phase is accompanied by the formation of large triangular islands due to a local increase of growth rate for a dopant concentration exceeding 10 20 cm −3 .
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
