Abstract
The laser-induced white emission of the graphene-based microchip was investigated under near-infrared region laser irradiation. The emission was characterized by an excitation threshold and an exponential dependence on the pump laser power. A decrease in temperature caused an increase in both the number of absorbed photons and the emission threshold. This dependence can be explained by the multiphoton ionization process in (sp2, sp3) hybridized domains.
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