Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

Sanjay Kumar,Kamlaksha Baral,Kunal Singh,Sweta Chander,P K Singh,Satyabrata Jit

doi:10.1109/i2ct.2018.8529418

Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

Sanjay Kumar, Kamlaksha Baral + Show 4 more

https://doi.org/10.1109/i2ct.2018.8529418

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Publication Date: Apr 1, 2018

Citations: 6

Affiliation: Indian Institute of Technology BHU, Banaras Hindu University

#Tunnel Field-effect Transistors #Localized Charges + Show 8 more

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Abstract

In this work, the influence of localized interface charges on the energy band diagram, electric-field, surface potential and input-output characteristics of dual-material (DM) double-gate (DG) tunnel field-effect transistors (TFETs) have been demonstrated. These localized charges are created near the source/channel junction due to hot carrier effects (BCEs). The energy band diagram, electric field, surface potential and drain current of DM DG TFETs with and without localized interface charge density (N f ) is also stuided. A two-dimensional (2-D) numerical simulation software ATLAS™ has been used to obtain the results of DM DG TFET devices.

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