Abstract
Mo-SnSe multilayer films were deposited by multi-step magnetron sputtering. The Mo-SnSe multilayer films are then annealed, and the new phases including SnSe2 and MoSe2 are observed by x-ray diffraction and Raman spectroscopy. Scanning electron microscopy reveals that the SnSe exhibits the columnar grain structure with sizes from 50–100 nm. The high-resolution transmission electron microscopy shows the SnSe2 is dispersed at the boundary of the columnar grain and the local MoSe2/SnSe heterojunction is formed in the interior of the columnar grain. The influence of Mo content on the thermoelectric properties of SnSe thin films was investigated. A maximum power factor of 0.44 μW cm−1 K−2 was obtained for a 2.6 at.% Mo-doped SnSe thin film at 576 K, which is higher than that of a SnSe thin film deposited under the same conditions.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
