Influence of lithium fluoride thickness on electrical switching behavior in a cross-point structure using self-assembly molecules

Abstract

A cross-point structure using an n-type organic semiconductor and a self-assembly molecule (SAM) layer was fabricated. The structure featured electrical switching behavior attributed to the charge trapping at the organic/SAM interface. We found that such an electrical transition was influenced by the thickness of a passivation layer of lithium fluoride (LiF) that led to different electrical behaviors, especially regarding the on/off ratio and stability/reversibility of the transition levels. Investigations revealed that the morphology of LiF layer changed based on its thickness, thereby influencing the subsequent deposition of organic materials and resulting in different charge trapping properties at the organic/SAM interfaces.