Abstract
Li-doped PbZr0.52Ti0.48O3 (PZT) films were utilized to study the effect of A-site acceptor dopants on the mobility of ferroelectric domain walls. For chemical solution-deposited PZT films 2 μm in thickness doped with 1–3 mol% Li, the low-field dielectric permittivity remained between 1200 and 1300. With increasing Li concentration, the reversible Rayleigh constants einit increased from 1080 for undoped PZT films to 1240 for the films doped with 3 mol% Li, while the irreversible Rayleigh parameter showed a peak value at 1 mol% Li doping.
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