Abstract
The influence of lattice polarity on wurzite GaN{0 0 0 1} decomposition was investigated using an in situ gravimetric monitoring (GM) method with freestanding GaN(0 0 0 1). At temperatures below about 820°C, the decomposition rate of GaN(0 0 0 1) was faster than that of GaN (0 0 0 1 ̄ ) . On the other hand, the decomposition rate of GaN (0 0 0 1 ̄ ) was faster than that of GaN(0 0 0 1) at temperatures between about 850°C and 950°C. The relation between the decomposition rate and the H 2 partial pressure ( P H 2 ) indicates that the rate-limiting reactions are N( surface)+ 3 2 H 2( g)→ NH 3( g) at lower temperatures, but Ga( surface)+ 1 2 H 2( g)→ GaH( g) at higher temperatures.
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