Abstract
We have examined the influence of lattice mismatch on hydrogen incorporation into C-doped In 0.53Ga 0.47As grown by metalorganic chemical vapor deposition on InP or GaAs substrate. It was found that the hydrogen concentration in C-doped In 0.53Ga 0.47As grown on GaAs substrate was lower than that on InP substrate, which results in a decrease in sheet resistance of C-doped In 0.53Ga 0.47As grown on GaAs. This might be because hydrogen incorporation into C-doped In 0.53Ga 0.47As was suppressed by high-density dislocation.
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