Abstract
The effect of laser irradiation with hν=1.96 eV (λ=0.63 µm) on the properties of titanium-silicon contacts subjected to steady-state thermal annealing in a nitrogen atmosphere is studied. It is found that treatment-induced changes in the phase composition of the contact modify its electrophysical parameters. The applicability of laser irradiation to the formation of rectifying titanium-silicon junctions with desired parameters is demonstrated.
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