Abstract
The paper presents the results of processing a silicon surface with subpicosecond laser pulses under various exposure conditions. The variable conditions were: pressure in the working chamber, the speed of scanning the silicon surface with a laser beam and the laser pulse energy. Special attention was paid to the interaction of the laser-induced plasma plume with the surface of the processed material, with laser radiation and with the medium. The influence of the medium on the parameters of the laser-induced plasma is estimated. The result of this interaction is a change in the spatial characteristics of the laser-induced plasma channel, the period and type of the formed periodic surface structures, what is related to the change in the laser radiation passing through the medium at different pressures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.