Influence of irradiation-induced disorder on the Peierls transition in TTF–TCNQ microdomains

Abstract

The combined influence of electron irradiation-induced defects, substrate-induced strain and finite size effects on the electronic transport properties of individual micron-sized thin film growth domains of the organic charge transfer compound tetrathiafulvalene– tetracyanoquinodimethane (TTF–TCNQ) have been studied. The TTF–TCNQ domains have been isolated and electrically contacted by focused ion beam etching and focused ion and electron-beam-induced deposition, respectively. This allowed us to measure the temperature-dependent resistivity and the current–voltage characteristics of individual domains. The dependence of the resistivity on temperature follows a variable-range hopping behaviour which shows a crossover of the exponents as the Peierls transition is approached. The low temperature behaviour is analysed within the segmented rod model of Fogler, Teber and Shklovskii which was developed for charge-ordered quasi one-dimensional electron crystals (Fogler et al 2004 Phys. Rev. B 69 035413). The effect of substrate-induced biaxial strain on the Peierls transition temperature is discussed with regard to its interplay with the defect-induced changes.