Abstract
The influence of optical radiation near the impurity absorption band on the electron mobility in submicron doped gallium arsenide layers formed on semi‐insulating substrates is investigated. To determine the low‐field mobility of carriers, a method is used which is based on measurements of the mutual conductance and series resistances of a field‐effect transistor at low source‐to‐drain voltage. It has been established that the electron mobility increases under IR illumination as a consequence of decrease in electron scattering, and this is related to the photoneutralization of deep‐lying chrome acceptors.
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