Abstract
Chromium thin films are deposited by combining direct current magnetron sputtering and high power impulse magnetron sputtering (HiPIMS) on a single cathode in an industrial deposition system. While maintaining a constant deposition rate and unchanged metal ion energy distribution function, the fraction of the total power supplied by either deposition technique is altered, and thereby also the metal ion to metal neutral ratio of the deposition flux. It is observed that the required total average power needed to be proportionally increased as the HiPIMS fraction is increased to be able to keep a constant deposition rate. The influence on microstructure, electrical, and electrochemical properties of the films is investigated and shows improvements with the use of HiPIMS. However, considerable influence of the studied properties occurs already when only some 40% of the total power is supplied by the HiPIMS technique. Further increase of the HiPIMS power fraction results in comparatively minor influence of the studied properties yet significant deposition rate efficiency reduction. The results show that the degree of ionization can be controlled separately, and that the advantages associated with using HiPIMS can be obtained while much of the deposition rate reduction, often reported for HiPIMS, can be avoided.
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