Abstract
PN-heterojunction type solar cells have been fabricated by immersing n-type polycrystalline CdS films in a solution containing copper ions, to form a p-type Cu 2 S layer over the CdS surface. The efficiency and stability of these devices have been found to be very dependent on the grain structure of the initial CdS layers but by the use of ion implantation to modify the structure of the CdS surface significant improvements in cell characteristics have been obtained. Evidence is provided to show that this improvement can be attributed to a reduction in the effective junction area of the cells.
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